Places, as shown in firstinsets of Figure 8b,e, suggests that the actualrespect to linear match.

Places, as shown in firstinsets of Figure 8b,e, suggests that the actualrespect to linear match. Nevertheless, the the derivative from the parasitic capacitance with variation the gold pad regions, as shown inside the insets of Figure 8b,e, suggests that the actual variation of Cpar has growing dependence around the location of the gold pad electrodes. Within this regard, the polycrystalline nature on the PZT [16,44] and PMN-PT surfaces in our case is expected to have an essential function in a pronounced effect on the dispersion for smaller sized pads in comparison to larger pad places, where an averaging in the polycrystalline effect prevails, as JPH203 supplier clearly visible around the SEM pictures in Figure 5c,f. Applying the model of a parasitic capacitance, as described above, an equivalent parasitic layer is introduced to account for the variations of Cpar.Nanomaterials 2021, 11,13 ofEquation (eight) shows that the ratio on the equivalent FAUC 365 MedChemExpress permittivity towards the equivalent thickness of this parasitic layer is straight proportional towards the initial derivative on the parasitic capacitance: par 1 dCpar = . (eight) 0 dA dpar The good quality in the interfacial layer under the gold pads is directly dependent around the surface roughness of your high- samples. The measurement from the actual interface roughness beneath the gold electrodes is not accessible. Nonetheless, the larger the roughness, the higher the equivalent thickness on the parasitic layer will be. For this, we take into account a selection of distinct values for the parasitic capacitance thickness dpar amongst two nm and 14 nm. While the lowest worth reflects low regional roughness under a gold pad, the highest value of 14 nm corresponds to the typical peak-to-valley worth calculated more than the entire surface excluding the circular gold pads. Utilizing these values, we extract a bounded variety for the feasible variations of your equivalent relative permittivity of the parasitic capacitance par as shown in Figure 8c,f for the PZT and PMN-PT samples, respectively. We come across that, for the PZT sample, the equivalent parasitic permittivity r,par remains largely below 80, except for the greater values of dpar . These values are well under the extracted dielectric continual for the PZT film (i.e., r,PZT = 445 16). This suggests that the equivalent parasitic layer is largely formed by air voids and potentially confined water. Not too long ago reported benefits around the anomaly low permittivity of confined water, where r 80 [45], go alongside this suggestion. The variations in r,par for the PMN-PT sample shows a equivalent behaviour for the case of a low roughness interface represented by small values of dpar . Even so, the AFM analysis in Figure four clearly indicates a substantially larger surface roughness for the PMN-PT sample. Hence, the higher values of dpar (i.e., dpar = ten and 14 nm) constitute a much better representation of your variations inside the dielectric continuous of the parasitic capacitance for the case of PMN-PT. It is actually noticeable within this case that r,par is largely higher than 80 (dielectric continual of bulk water), virtually for all gold pad places, as shown in Figure 8f. r,par increases as the location from the gold electrodes increases, reaching values comparable to that extracted for the PMN-PT film (i.e., r,PMN-PT = 641 44). This points towards the fact that the rough PMN-PT surface results in a parasitic layer below the gold pads largely incorporating peaks in the ferroelectric material having a lower density of voids, in particular for bigger gold pads. This evaluation highlights the crucial part in the interfacial surfac.